Investigation of the hot carrier degradation in power ldmos transistors with customized thick oxide. Physics and characterization of various hotcarrier. Rf power ldmos transistors high ruggedness nchannel enhancementmode lateral mosfets rf power transistors suitable for both narrowband and broadband cw or pulse applications operating at frequencies from 1. Design tradeoff of hot carrier immunity and robustness in. Mechanism and lifetime prediction method for hotcarrier. The degradation mechanism depends on the device structure and stress condition. Hot carrier degradation behaviour of highvoltage ldmos transistors, 8th international seminar on power semiconductors, 7984 2006. Hot carrier degradation chetan prasad, jacopo franco a vast majority of the respondents 80% use sh corrections for their hc degradation data. Hot carrier effect on ldmos transistors stars university of. Hotcarrierinduced device degradation of highvoltage ptype lateral diffused metaloxide semiconductor ldmos transistors is investigated. Study on maximum electric field modeling used for hci. Anomalous safe operating area and hot carrier degradation. Characteristics and improvement in hotcarrier reliability.
S parameter performance degradation in power rf nldmos. The only model input parameters are the gate and drain voltage v ds and v gs. Robustness evaluation study of power rf ldmos devices. Recently, the hotcarrier reliability of ldmos transistors has attracted considerable attention. Read s parameter performance degradation in power rf nldmos devices due to hot carrier effects, microelectronics reliability on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Most of them use corrections based on thermal modeling either rigorous, or compact derived from measurements of local temperatures.
Pdf characterization and modeling of hot carrier injection in. This paper reports on self heating caused by hotcarrier hc stress in packaged thick gate oxide hv ldmos devices, and how self heating significantly affects hc degradation characteristics. Wire width dependence of hot carrier degradation in silicon nanowire gateallaround mosfets jin hyung choi, jong tae park. This paper presents a synthesis of robustness evaluation on power rf ldmos devices and its relation with electrical and physical behaviours after rf lifetests. Therefore, further in the text we mean just the channel hotcarrier mode when referring to hotcarrier degradation. As a part of this work, a set of stressing experiments are suggested to study the various aspects of device degradation in nchannel mosfets comprehensively. The hot carrier performance of nldmos and pldmos transistors is evaluated. A retrograde doping profile implementation at the drift region of a soi power ldmos transistor is proposed and analysed in this paper. Hot carrier degradation of pldmos transistors for rf. A comprehensive model for hot carrier degradation in ldmos. Liu2 1institute of microelectronics, department of electrical engineering, and advanced optoelectronic technology center, national cheng kung university, tainan 70101, taiwan.
The setup of the model is based on the existing hotcarrier degradation mechanism in a soiligbt and assisted by a lateral dmos device on soi substrate soildmos with completely the same structure except for the doping type in the drain area. The hotcarrier degradation is fully reproduced in the frame of tcad simulations. The time, voltage, and temperature dependences are also presented. Hot carrier stress tests are performed on a class of nchannel ldmos transistors realized in a 0. A twostage linear region drain current i dlin shift i dlin shift increases rapidly at the beginning of stress but tends to saturate when. Introduction i n recent years, multifunction power integrated chips are strongly demanded for the market of portable devices, automotive applications, and display drivers 1. Hot carrier injection hci is a phenomenon in solidstate electronic devices where an electron or a hole gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state.
Lindorfer and prasad chaparala, journalieee transactions on device and materials reliability, year2006. Mechanism and lifetime prediction method for hotcarrierinduced degradation in lateral diffused metaloxidesemiconductor transistors jone f. Short channel effects 18 institute of microelectronic systems process variations. Tibor grasser and the authors of hot carrier degradation in semiconductor devices have made a major contribution to the field of hotcarrier degradation. A novel model for hotcarrier degradation in a lateral insulated gate bipolar transistor igbt device on soi substrate soiligbt is presented. Pdf hot carrier reliability in ldmos devices researchgate. Short and long term safe operating area considerations in. I am emeritus since 2006 and believe that, after reading these great chapters, i could work again at the cutting edge of hot carrier transport, from the basic physics to modern device. Evidence for source side injection hot carrier effects on. The hot carrier performance of n ldmos and p ldmos transistors is evaluated. This paper presents how to improve specific o nstate resistance ron induced by the hci of a soi ldmos device. Hot carrier degradation in semiconductor devices tibor.
Read analysis of hotcarrier degradation in a soi ldmos transistor with a steep retrograde drift doping profile, microelectronics reliability on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. The hot carrier degradation behaviour of ldmos transistors is subject to many investigations dealing with n ldmos transistors versari, 1999, but there are only a few about p ldmos transistors. The hotcarrier degradation and related modeling approaches for hydrogen dissociation are discussed in chapter 6. I am emeritus since 2006 and believe that, after reading these great chapters, i could work again at the cutting edge of hotcarrier transport, from the basic physics to modern device. The hot carrier degradation behavior of lateral integrated dmos transistors is studied in detail with a. Royb, hotcarrier degradation in decananometer cmos nodes. In this study, the hotcarrier reliability of 12v nchannel. Investigation of the hot carrier degradation in power. The single high energetic particle is the dominant process inducing bondbreakage. A complete understanding of the hot carrier degradation problem in submicron 0.
Hot carrier degradation in a class of radio frequency n. Pdf analysis of hotcarrier degradation in a soi ldmos. Rf power ldmos transistors high ruggedness n channel enhancementmode lateral mosfets rf power transistors suitable for both narrowband and broadband cw or pulse applications operating at frequencies from 1. In this paper, a hot carrier degradation analysis has been performed on medium rated voltage ndrift ldmos transistors with customized thick oxide aimed at optimizing the soa limitations coming from the sti architecture. Effect of hotcarrierinduced interface states distribution on linear. Wire width dependence of hot carrier degradation in.
An ldmos hot carrier model for circuit reliability simulation 2014 we have characterized fresh and stressed nchannel ldmos with measurement and simulations. It is found that the interface traps generation in the gatentype graded drain ngrd overlap and spacerngrd regions is the dominant mechanism of hot carrier degradation in transistors upon ig. Hsu2 1institute of microelectronics, department of. But with our process design we are able to improve ron degradation without compromising thebreakdown voltage. In this paper, we present an analysis of the degradation induced by hot carrier stress in new generation power lateral doublediffused mos ldmos transistors. Hot carrier reliability of nldmos transistor arrays for. Model of hotcarrier degradation hcd features were simulated and analyzed using the methodology we developed previously 1619 and employed to describe device damage by hot carriers in shortchannel transistors and highpower semiconductor devices lateral doublediffused mos ldmostransistors 20, 21. Zhejiang university, 1998 a dissertation submitted in partial fulfillment of the requirements for the degree of doctor of philosophy in the school of electrical engineering and computer science in the college of engineering and computer science. In our design the peak electric field is under gate near. The relation of the drift doping profile and the hot carrier degradation effect is studied in conventional and retrograde drift doping profile soi power ldmos transistors.
Ld mosfet and its effect on rf circuit, the hotcarrier injection experiment in which dynamic iii. The term hot refers to the effective temperature used to model. Mollee nxp semiconductors, gerstweg 2, 6534 ae, nijmegen, the netherlands. For n ldmos transistors, the drain current degradation is shown to be due to hot electron injection in the drift region. Improvement of onresistance degradation induced by hot. Twostage hot carrier degradation of ldmos transistors. Two architectures with the same nominal voltage and comparable performance featuring a selective locos and a shallowtrench isolation are investigated by means of constant voltage stress measurements and tcad simulations. This paper presents a comprehensive yet physical model for hot carrier degradation in ldmos transistors. Mos transistor structures against charge carrier degeneration. Analysis of the features of hotcarrier degradation in finfets. In order to qualify new power rf ldmos reliability for radar applications, a 3000 h pulsed rf life test has been conducted on a dedicated rf sband test bench in operating modes 11.
Ldmos advantages a ldmos transistors are voltagecontrolled devices, so no. Kingswood, a new techniqueto measurethethermal resistanceof ldmos transistors, ieee trans. The hot carrier degradation behaviour of ldmos transistors is subject to many investigations dealing with nldmos transistors versari, 1999, but there are only a few about pldmos transistors. Short channel effects 17 institute of microelectronic systems hot carrier effects ii hot carrier effects cause the iv characteristics of an nmos transistor to degrade from extensive usage. In this brief, we present an analysis of the degradation induced by hotcarrier stress in new generation power lateral doublediffused mosfet ldmos transistors. These high drain voltages potentially make nldmos hot carrier degradation an important reliability concern. Generally, the hotcarrier degradation is associated with the. It is important to understand the physical degradation mechanism effects and the liaison on drifts of critical electrical parameters after life ageing tests, in iv such as threshold voltage vth, the feedback capacitance crss in c. For nldmos transistors, the drain current degradation is shown to be due to. Effect of hotcarrierinduced interface states distribution on linear drain current degradation in 0. Hot carrier effect on ldmos transistors by liangjun jiang m.
Thermal effects in power transistors burnout melting of portions of device, rapid diffusion of defects, excess stress, etc degradation thermal runaway in bipolar transistors decreased performance. Charge trapping is spatially localized at the selective sisio2 locos interface. Two architectures with the same nominal voltage and comparable. Ldmos transistors in power microwave applications s. Investigation of the hot carrier degradation in power ldmos. The integrated bipolar, cmos, and dmos bcd process has been.
Hot carrier effect on ldmos transistors by liangjun jiang. This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of todays most complicated reliability issues in semiconductor devices. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. Index termshotcarrier degradation, lateral diffused mos ldmos, threeregion charge pumping cp. Short and longterm safe operating area considerations in ldmos transistors philip l hower and sameer pendharkar mixedsignal technology development texas instruments manchester, nh 03101, and dallas, tx 75321, usa. Chapters iii presents the issues speci c to hotcarrier injection in nchannel mosfets. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gatetodrain overlap for better hot carrier immunity, and to achieve uniform efield distribution on drain side for robustness.
Reliability simulation models for hot carrier degradation. Hot carrier degradation in semiconductor devices tibor grasser eds. In manufacturing of uhv device, tradeoff between on state resistance and breakdown voltage is always present. In smart power applications, high voltage lateral dif. Ldmos devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Pdf on oct 1, 2017, jifa hao and others published hot carrier reliability in ldmos. Physicsbased models are used providing the degradation kinetics. Introduction to the special issue on smart power device. It is required to study the hot electron induced performance degradation of mos transistors. The nldmos has been the common choice for the driver transistor in high voltage 2030 v smart power applications. In particular, the onresistance degradation in linear regime has been experimentally investigated for an extended range of.
Transistor technologies for high efficiency and linearity. The time delay between the removal of the hc stress and the parameter measurement significantly after each stress cycle significantly affected the measured hc idlinrdson degradation. The degradation is mainly due to sih breaking and interface trap generation at maximum hot carrier stress conditions v gv d2. Aoki, et at, study on maximum electric field modeling used for hic induced degradation characteristic of ldmos transistors, ieee 11th international conference on asic, 2015. Analysis of hotcarrier degradation in a soi ldmos transistor with a steep retrograde drift doping profile. Degradation due to hot carrier injection and its mechanism are discussed. Twostage hotcarrierinduced degradation of ptype ldmos. This paper evaluates the hot carrier performance of nchannel lateral dmos nldmos transistors. Hot carrier degradation in ldmos power transistors ieee xplore.
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